f dn 336 p general description features absolute maximum ratings t a = 25 o c unless other wise noted symbol parameter f dn 336 p units v dss drain-source voltage -20 v v gss gate-source voltage 8 v i d drain current - continuous -1.3 a - pulsed -10 p d maximum power dissipation (note 1a) 0.5 w (note 1b ) 0.46 t j ,t stg operating and storage temperature range -55 to +150 c thermal characteristics r q ja thermal resistance, junction-to-ambient (note 1a) 250 c/w r q jc thermal resistance, junction-to-case (note 1) 75 c/w -1.3 a , -20 v. r ds(on) = 0.20 w @ v gs = -4.5 v r ds(on) = 0.27 w @ v gs = - 2.5 v. low gate charge ( 3.6 nc typical ). high performance trench technology for extremely low r ds(on) . high power version of industry s tandard sot-23 package. identical pin out to sot-23 with 30% higher power handling capability. this p -channel 2.5v specified mosfet is produced using fairchild semiconductor 's advanced powertrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance . these devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and dc/ dc conversion. sot-23 supersot t m -8 soic-16 so-8 sot-223 supersot t m -6 g d s supersot -3 tm 336 d s g 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
electrical characteristics (t a = 25 o c unless otherwise noted ) symbol parameter conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = -250 a -20 v d bv dss / d t j breakdown voltage temp. coefficient i d = -250 a , referenced to 25 o c -16 mv / o c i dss zero gate voltage drain current v ds = -16 v, v gs = 0 v -1 a t j = 5 5c -10 a i gssf gate - body leakage, forward v gs = 8 v, v ds = 0 v 100 na i gssr gate - body leakage, reverse v gs = -8 v, v ds = 0 v -100 na on characteristics (note 2 ) v gs (th) gate threshold voltage v ds = v gs , i d = -250 a -0.4 -0.9 -1.5 v d v gs(th) / d t j gate threshold voltage temp. coefficient i d = -250 a , referenced to 25 o c 3 mv / o c r ds(on) static drain-source on-resistance v gs = -4 .5 v, i d = -1.3 a 0.122 0.2 w t j =12 5c 0.18 0.32 v gs = -2 .5 v, i d = -1.1 a 0.19 0.27 i d(on) on-state drain current v gs = -4.5 v, v ds = -5 v -5 a g fs forward transconductance v ds = -4.5 v, i d = -2 a 4 s dynamic characteristics c iss input capacitance v ds = -10 v, v gs = 0 v, f = 1.0 mhz 330 pf c oss output capacitance 80 pf c rss reverse transfer capacitance 35 pf switching ch aracteristics (note 2) t d(on ) turn - on delay time v dd = -5 v, i d = -0.5 a, v gs = -4.5 v, r gen = 6 w 7 15 ns t r turn - on rise time 12 22 ns t d(off) turn - off delay time 16 26 ns t f turn - off fall time 5 12 ns q g total gate charge v ds = -10 v, i d = - 2 a, v gs = -4 .5 v 3.6 5 nc q gs gate-source charge 0.8 nc q gd gate-drain charge 0.7 nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -0.42 a v sd drain-source diode forward voltage v gs = 0 v, i s = -0 .42 a (note ) -0.7 -1.2 v note: 1 . r q ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the s older mounting surface of the drain pins. r q jc is guaranteed by design while r q ca is determined by the user's board design. scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300 s, duty cycle < 2.0%. a. 250 o c/w when mounted on a 0.0 2 in 2 pad of 2oz cu. b. 270 o c/w when mounted on a 0.001 in 2 pad of 2oz cu. 2of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com f dn 336 p smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
|
